APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 1-9 isotop absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v i c1 t c = 25c 67 i c2 continuous collector current t c = 110c 30 i cm pulsed collector current t c = 25c 120 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 245 w ssoa switching safe operating area t j =150c 120a @ 600v if av maximum average forward current duty cycle=0.5 t c = 80c 30 if rms rms forward current (square wave, 50% duty) 39 a these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. k e c g v ces = 600v i c = 30a @ tc = 110c application ac and dc motor control switched mode power supplies power factor correction brake switch features power mos 7 ? punch through (pt) igbt - low conduction loss - ultra fast tail current shutoff - low gate charge - switching frequency capability in the 200khz range - soft recovery parallel diodes - low diode vf isotop ? package (sot-227) very low stray inductance high level of integration benefits outstanding performance at high frequency operation stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance isotop ? boost chopper pt igbt k c g e
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 2-9 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 0.5ma 600 v t j = 25c 500 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 3000 a t j = 25c 2.2 2.7 v ce(on) collector emitter on voltage v ge =15v i c = 30a t j = 125c 2.1 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 3 4.5 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3200 c oes output capacitance 295 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 20 pf q g total gate charge 90 q ge gate ? emitter charge 20 q gc gate ? collector charge v gs = 15v v bus = 300v i c = 30a 30 nc t d(on) turn-on delay time 15 t r rise time 20 t d(off) turn-off delay time 55 t f fall time 46 ns e on1 turn-on switching energy 260 e on2 turn-on switching energy 335 e off turn-off switching energy inductive switching (25c) v ge = 15v v bus = 400v i c = 30a r g = 5 250 j t d(on) turn-on delay time 15 t r rise time 18 t d(off) turn-off delay time 84 t f fall time 80 ns e on1 turn-on switching energy 260 e on2 turn-on switching energy 508 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 400v i c = 30a r g = 5 518 j e on2 includes diode reverse recovery in accordance with jedec standard jesd24-1
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 3-9 diode ratings and characteristics symbol characteristic test conditions min typ max unit i f = 30a 1.6 1.8 i f = 60a 1.9 v f diode forward voltage i f = 30a t j = 125c 1.4 v v r = 600v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a c t junction capacitance v r = 200v 44 pf reverse recovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 23 t j = 25c 85 t rr reverse recovery time t j = 125c 160 ns t j = 25c 4 i rrm maximum reverse recovery current t j = 125c 8 a t j = 25c 130 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 700 nc t rr reverse recovery time 70 ns q rr reverse recovery charge 1300 nc i rrm maximum reverse recovery current i f = 30a v r = 400v di/dt =1000a/s t j = 125c 30 a thermal and package characteristics symbol characteristic min typ max unit igbt 0.51 r thjc junction to case diode 1.21 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 4-9 typical igbt performance curve
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 5-9
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 6-9
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 7-9 typical diode performance curve
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 8-9
APT30GU60JU2 APT30GU60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 9-9 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. isotop ? is a registered trademark of sgs thomson apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved. emitter gate collector cathode
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